In-nSiC schottky photodiode ; Fabrication and Study
In the present work , schottky photodiode have been mode on n-type SiCby depositing of thin layer of In.electrical characteristics included I-V(dark and illumination ) have been Bookends investigated.Ideality factor is 1.6 andbarrier height is 0.53 eV COLD was calculated from I-V and Isc-Voccharacteristics, Ideality factor is 1.7 and barrier height